G4MuElecSiStructure.hh

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00001 //
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00026 //
00027 // G4MuElecSiStructure.hh, 2011/08/29 A.Valentin, M. Raine
00028 //
00029 // Based on the following publications
00030 //
00031 //          - Inelastic cross-sections of low energy electrons in silicon
00032 //          for the simulation of heavy ion tracks with theGeant4-DNA toolkit,
00033 //          NSS Conf. Record 2010, pp. 80-85
00034 //          - Geant4 physics processes for microdosimetry simulation:
00035 //          very low energy electromagnetic models for electrons in Si,
00036 //          NIM B, vol. 288, pp. 66-73, 2012.
00037 //          - Geant4 physics processes for microdosimetry simulation:
00038 //          very low energy electromagnetic models for protons and
00039 //          heavy ions in Si, NIM B, vol. 287, pp. 124-129, 2012.
00040 //
00041 //....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo...... 
00042 
00043 
00044 #ifndef G4MUELECSISTRUCTURE_HH
00045 #define G4MUELECSISTRUCTURE_HH 1
00046  
00047 #include "globals.hh"
00048 #include <vector>
00049 
00050  
00051 class G4MuElecSiStructure
00052 {
00053 public:
00054   
00055   G4MuElecSiStructure();
00056   
00057   virtual ~G4MuElecSiStructure();
00058   
00059   G4double Energy(G4int level);
00060 
00061   G4int NumberOfLevels() { return nLevels; }
00062   
00063     
00064 private:
00065    
00066  // Number of levels of silicon
00067  G4int nLevels;
00068 
00069   std::vector<G4double> energyConstant;
00070   
00071 };
00072 
00073 #endif

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